frequency multipliers - passive - chip 2 2 - 16 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc205 gaas mmic passive frequency doubler, 6 - 12 ghz input v03.0907 general description features functional diagram conversion loss: 12 to 17 db fo, 3fo, 4fo isolation: 32 db passive: no bias required electrical specifi cations, t a = +25 c, as a function of drive level typical applications the hmc205 is a passive miniature frequency doubler in a mmic die. suppression of undesired fundamen- tal and higher order harmonics is 32 db typical with respect to input signal level. the doubler utilizes the same gaas schottky diode/balun technology found in hittite mmic mixers. it features small size, no dc bias, and no measurable additive phase noise onto the mul- tiplied signal. the hmc205 is suitable for: ? wireless local loop ? lmds, vsat, and point-to-point radios ? test equipment input = +10 dbm input = +12 dbm input = +15 dbm parameter min. typ. max. min. typ. max. min. typ. max. units frequency range, input 7.0 - 12.0 6.0 - 12.0 6.0 - 12.0 ghz frequency range, output 14.0 - 24.0 12.0 - 24.0 12.0 - 24.0 ghz conversion loss 18 21 17 20 15 18 db fo isolation (with respect to input level) 28 32 db 3fo isolation (with respect to input level) 36 40 db 4fo isolation (with respect to input level) 26 32 db
frequency multipliers - passive - chip 2 2 - 17 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. temperature @ +15 dbm drive level isolation @ +15 dbm drive level* input return loss vs. drive level output return loss for several input frequencies *with respect to input level -20 -15 -10 -5 0 6789101112 +25 c -40 c +85 c conversion gain (db) input frequency (ghz) -20 -15 -10 -5 0 6789101112 +8 dbm +10 dbm +12 dbm +13 dbm return loss (db) frequency (ghz) -20 -15 -10 -5 0 12 14 16 18 20 22 24 6 ghz in 8 ghz in 10 ghz in 12 ghz in return loss (db) output frequency (ghz) -80 -70 -60 -50 -40 -30 -20 -10 0 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 f0 2*f0 3*f0 4*f0 isolation (db) frequency (ghz) hmc205 v03.0907 gaas mmic passive frequency doubler, 6 - 12 ghz input
frequency multipliers - passive - chip 2 2 - 18 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain @ 25c vs. drive level output return loss with 6 ghz input conversion gain @ -55c vs. drive level output return loss with 12 ghz input conversion gain @ +85c vs. drive level output return loss with 10 ghz input -20 -15 -10 -5 0 12 14 16 18 20 22 24 return loss (db) output frequency (ghz) +8 dbm +10 dbm +12 dbm +14 dbm -40 -35 -30 -25 -20 -15 -10 -5 0 6789101112 +8 dbm +10 dbm +12 dbm +15 dbm conversion gain (db) input frequency (ghz) -20 -15 -10 -5 0 12 14 16 18 20 22 24 return loss (db) output frequency (ghz) +8 dbm +10 dbm +12 dbm +14 dbm -40 -35 -30 -25 -20 -15 -10 -5 0 6789101112 +8 dbm +10 dbm +12 dbm +15 dbm conversion gain (db) input frequency (ghz) -20 -15 -10 -5 0 12 14 16 18 20 22 24 +8 dbm +10 dbm +12 dbm +14 dbm return loss (db) output frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 6789101112 +8 dbm +10 dbm +12 dbm +15 dbm conversion gain (db) input frequency (ghz) hmc205 v03.0907 gaas mmic passive frequency doubler, 6 - 12 ghz input
frequency multipliers - passive - chip 2 2 - 19 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings outline drawing notes: 1. all dimensions are in inches [mm] 2. bond pads are .004 square 3. typical bond pad spacing center to center is .006 except as shown. 4. backside metallization: gold 5. backside metal is ground. 6. bond pad metallization: gold input drive +27 dbm storage temperature -65 to +150 c operating temperature -55 to +85 c electrostatic sensitive device observe handling precautions die packaging information [1] standard alternate wp-2 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. hmc205 v03.0907 gaas mmic passive frequency doubler, 6 - 12 ghz input
frequency multipliers - passive - chip 2 2 - 20 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc205 v03.0907 gaas mmic passive frequency doubler, 6 - 12 ghz input pad number function description interface schematic 1 rfin dc coupled and matched to 50 ohm. 2 rfout dc coupled and matched to 50 ohm. die bottom gnd die bottom must be connected to rf/dc ground. pad desciption
frequency multipliers - passive - chip 2 2 - 21 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients : suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically con- ductive epoxy. the mounting surface should be clean and fl at. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 1.0 diameter pure gold wire. thermosonic wirebonding wiht a nominal stage tem- perature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package. rf bonds should be as short as possible. hmc205 v03.0907 gaas mmic passive frequency doubler, 6 - 12 ghz input
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